Electron Plasmas Cooled by Cyclotron-Cavity Resonance

Electron Plasmas Cooled by Cyclotron-Cavity Resonance.

We observe that high-Q electromagnetic cavity resonances increase the cyclotron cooling rate of pure electron plasmas held in a Penning-Malmberg trap when the electron cyclotron frequency, controlled by tuning the magnetic field, matches the frequency of standing wave modes in the cavity. For certain modes and trapping configurations, this can increase the cooling rate by factors of 10 or more....

Insulators obtained by electron cyclotron resonance plasmas on Si or GaAs

Silicon oxynitride (SiOxNy) and nitride (SiNx) insulators have been deposited or grown (with or without silane in the gas mixture, respectively) by electron cyclotron resonance (ECR) plasmas on Si and/or GaAs substrates at room temperature (20 jC) and low pressures (up to 10 mTorr). Chemical bonding characteristics of the SiOxNy and SiNx films were evaluated using Fourier transform infrared spe...

Hydrogen Incorporation and Crystallization of Nanocrystalline Silicon Deposited by Electron Cyclotron Resonance Plasmas

Nanocrystalline silicon layers have been deposited by electron cyclotron resonance chemical vapor deposition from silane as precursor. Although hydrogen was not deliberately introduced in the plasma it was incorporated in the grown layers as evidenced by the presence of a main infrared absorption band around 2100 cm21 with a shoulder at 2000 cm21. This suggests that most of the hydrogen is bond...

Electron Cyclotron Resonance Ion Source

Electron Cyclotron Resonance Ion Source